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Jan 22,  · 1. Uninstall the old ME driver in Control Panel > Programs > Programs and Features. 2. Download and install the latest version ME Driver from ASUS official website. 3. Check ME driver version in Device Manager after installing it. Category Driver. Type Product Knowledge. ROG Maximus X Code supports two M.2 drives, delivering lightning-fast transfer speeds of up to 32Gbps. The first slot sits neatly below the PCH heatsink, and accommodates M.2 drives of up to mm in length (type ). Audífonos y Audio. Streaming Kit. Conoce más. Asus Design Center. ASUSPRO. Automotive Solutions. Soporte. Verificar estado de reparación. Encontrar ubicaciones de servicio.

 

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ROG Maximus IX Formula Z ATX gaming motherboard features CrossChill EK II, Aura Sync RGB LED lighting, ROG Armor, SupremeFX audio, plus dual M.2, 2×2 Wi-Fi & USB ROG Maximus X Code supports two M.2 drives, delivering lightning-fast transfer speeds of up to 32Gbps. The first slot sits neatly below the PCH heatsink, and accommodates M.2 drives of up to mm in length (type ). Jan 22,  · 1. Uninstall the old ME driver in Control Panel > Programs > Programs and Features. 2. Download and install the latest version ME Driver from ASUS official website. 3. Check ME driver version in Device Manager after installing it. Category Driver. Type Product Knowledge.
 
 
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TSMC receives satisfactory results from 45nm process technology, work begins on 32nm

The Taiwan Semiconductor Manufacturing Company (TSMC) has tested substrate fabricated using the 45nm process with satisfactory results, according to Taiwan’s DigiTimes website.

In the near future, TSMC and Freescale Semiconductor will start joint activities to develop a 32nm process technology. STMicroelectronics and Philips will also participate in the development, and pilot production is planned to begin at the Fab Crolles2 plant located in France.

Recall that TSMC, unlike Intel, implements immersion tools for production according to 45nm standards, they were also planned to be used for 32nm process technology.

Currently TSMC’s 45nm process contains 10 metallized layers, the gate length does not exceed 26nm. The conductors are made of copper, a triple layer of silicon oxide is created in the gate area, “strained silicon” and a new generation of dielectrics with a low dielectric constant (low-k) are used. 193-nm immersion lithographic tools manufactured by ASML are used for the production of microcircuits in compliance with the 45-nm technical process. Dielectric constant of low-k film is 2.5-2.6. By comparison, 90nm and 65nm processes use low-k dielectrics with a dielectric constant of 2.9-3.0. Films are sprayed using Applied Materials Black Diamond technology.

Source: DigiTimes